ma4l series 1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v13 features ? low insertion loss and noise figure ? high peak and average operating power ? various p1db compression powers ? low flat leakage power ? proven reliable, silicon nitride passivation ? rohs compliant description m/a-com technology solutions produces a series of silicon pin limiter diodes wi th small and medium i-region lengths which are specifically designed for high signal applications. the devices are designed to provide low insertion loss, at zero bias, as well as low flat leakage power with fast signal response/recovery times. parts are available as discrete die or assembled into a variety of surface mount or ceramic pill packages. see the available case style table on page 6 for the specific ceramic package styles and their availability for individual part numbers . applications the ma4lseries of pin limiter diodes are designed for use in passive limiter control circuits to protect sensitive receiver components such as low noise amplifiers (lna), detectors, and mixers covering the 10 mhz to 18 ghz frequency range. parameter absolute maximum forward current 100ma operating temperature -55c to +125c storage temperature -55c to +150c junction temperature +175c rf peak & c.w. incident power per performance table mounting temperature +320c for 10 sec. absolute maximum ratings 1 t amb = 25c (unless otherwise specified) note: 1. exceeding any of the above ratings may cause permanent damage. ods dimension mils m a 15 2 381 51 b 7 1 * 178 25.4 134 anode a square b full area cathode chip outline note: the madl-000301-01340w and ma4l401-134 ?b? dimension, is 10 1 mils
ma4l series 2 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v13 un-packaged die electrical specifications at t amb = 25c minimum reverse voltage v r maximum reverse voltage v r minimum c j0v pf maximum c j0v pf maximum r s 10ma ohms 1 nominal characteristics carrier lifetime i for =10ma i rev = -6ma ns 1 i-region thickness m contact diameter mils thermal resistance c/w 1 ma4l011-134 15 35 0.08 0.18 2.10 10 2 1.2 175 ma4l021-134 20 35 0.10 0.20 2.10 10 2 1.2 175 ma4l022-134 20 35 0.09 0.19 2.00 10 2 1.2 175 ma4l031-134 30 50 0.14 0.21 2.00 20 3 1.4 150 ma4l032-134 30 50 0.13 0.20 2.50 15 3 1.5 150 ma4l062-134 50 75 0.07 0.15 2.50 70 4 1.5 150 ma4l101-134 100 0.15 2.00 90 13 3.5 30 ma4l401-134 250 0.30 1.20 800 25 4.5 25 part number madl-000301-01340w 200 0.20 1.50 200 20 3.0 30 * nominal high signal performance at t amb = 25c part number incident peak power for 1db limiting @ 9.4ghz dbm incident peak power for 10db limiting @ 9.4ghz dbm incident peak power for 15db limiting @ 9.4ghz dbm recovery time (3 db) @ 50w peak power ns maximum incident peak power watts maximum cw input power watts ma4l011-134 7 30 40 10 80 2 ma4l021-134 8 31 41 15 90 3 ma4l022-134 8 31 41 15 90 3 ma4l031-134 10 33 43 25 125 4 ma4l032-134 11 34 44 25 125 4 ma4l062-134 15 38 50 75 200 5 ma4l101-134 20 45 53 100 250 6 ma4l401-134 30 52 60 250 1000 10 madl-000301-01340w 23 46 59 50 500 7 * see page 3 for high signal performance parameter notes. note: 1. test performed with the chip mounted in an ods-30 package.
ma4l series 3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v13 typical high signal peak power performan ce for the single shunt limiter diode in a 50 ? test fixture high signal performance : measured using a single shunt diode (die) attached directly to the gold plated rf housing ground with 2 mil thick conductive silver epoxy in a 50 ? , sma, connectorized test fixture. chip anode contact is thermo-compression wire bonded using a 1 mil. dia. gold wire onto a 7.2 mil thick rogers 5880 duroid microstrip trace. a shunt coil provides the d. c. return. test frequency = 9.4 ghz, for peak power measurements rf pulse width = 1.0 s, 0.001% duty cycle. typical peak power performance for single shunt limiter diode in 50 ohm system at 9.4 ghz, 1us pulse width, 0.001 duty 0 5 10 15 20 25 30 35 40 45 0 1020304050 pin ( dbm ) pout ( dbm ) ma4l011-134, ma4l021-134, ma4l022-134 ma4l031-134, ma4l032-134 ma4l101-134 ma4l401-132 MA4L301-134 20 db loss line 10 db loss line 30 db loss line 0 db loss line
ma4l series 4 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v13 application circuits typical +60dbm peak power, 1s p.w., 0.001% duty cycle, +20dbm flat leakage limiter circuit rf output ma4l401-134 rf input ma4l101-134 ma4l032-134 coil: d.c. return transmission line: 90o @ fo transmission line: 90o @ fo rf output ma4l032-134 rf input ma4l022-134 coil: d.c. return transmission line: 90o @ fo typical +50dbm peak power, 1s p.w., 0.001% duty cycle, +20dbm flat leakage limiter circuit
ma4l series 5 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v13 notes for specification and nominal high signal performance tables: 1) maximum series resistance : r s , is measured at 500 mhz in the ods-30 package and is equivalent to the total diode resistance: r s = rj (junction resistance) + r o (ohmic resistance) 2) nominal c.w. thermal resistance : ? th is measured in a ceramic pill package, ods-30, mounted to a metal (infinite) heatsink. chip only thermal resistance values are approximately 2c/w lower than the ods-30 listed package values in the specifications table. 3) maximum high signal performance : measured using a single shunt diode (die) attached directly to the gold plated rf housing ground with 2 mil thick conductive silver epoxy in a 50 ? , sma, connectorized test fixture. chip anode contact is thermo-compression wire bonded us ing a 1 mil. diameter gold wire onto a 7.2 mil thick rogers 5880 duroid microstrip trace. a shunt coil provid es the d.c. return. test frequency = 9.4 ghz, rf pulse width = 1.0 s, duty cycle = 0.001%. 4) maximum c.w. incident power : measured in a 50 ? , sma, connectorized housing @ 4ghz utilizing a twt amplifier and the same single diode asse mbly configuration as stated in note 3 above. die handling and mounting information handling: all semiconductor chips should be handled with care in order to avoid damage or contamination from perspiration, salts, and skin oils. for individual di e, the use of plastic tipped tweezers or vacuum pick up tools is strongly recommended. bulk handling should ensur e that abrasion and mechani cal shock are minimized. die attach: the die have ti-pt-au back and anode metal, with a final gold thickness of 1.0m. die can be mounted with a gold-tin, eutectic sol der perform or conductive silver epoxy. the metal rf and d.c. ground plane mounting surface must be free of contamination and should have a surface flatness or < 0.002?. ? eutectic die attachment using hot gas die bonder: an 80/20, gold / tin eutectic solder perform is recommended with a work surface temperature of 255 c and a tool tip temperature of 220c. when the hot gas is applied, the temperature at the tool tip should be approximately 290c. the chip should not be exposed to a temperatures in excess of 320c for more than 10 seconds. ? eutectic die attachment using reflow oven: refer to application note m538 , ?surface mounting instructions?. ? epoxy die attachment: a thin, controlled amount of electrically conductive silver epoxy should be applied, approximately 1-2 mils thick to minimize ohmic and t hermal resistances. a small epoxy fillet should be visible around the outer perimeter of the chip after placement to ensure full area coverage. cure the conductive silver epoxy per the manufacturer?s schedule, typically 150 ? c for 1 hour. wire bonding: the chip?s anode metallization stack is compris ed of ti/pt/au with a final gold thickness of 1.0m. thermo-compression wedge bonding using a .7 to 1 mil diameter gold wire is recommended, depending on the contact diameter. the heat stage temperature should be set to approximately 200c with a bonding tip temperature of 125 ? c and a force of 18 to 40 grams. use of ultras onic energy is not advis ed but if necessary it should be adjusted to the minimum required to achieve a good bo nd. excessive energy or force applied to the top contact will cause the metallization to dislodge and lift off. automati c ball bonding may also be used. s ee application note m541 , ?bonding and handling procedures for chip diode devices? for more detailed handling and assembly information.
ma4l series 6 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. silicon pin limiter diodes v13 package description nominal c pkg pf l s nh 30 ceramic pill 0.18 0.60 31 ceramic pill 0.18 0.60 32 ceramic pill 0.30 0.40 134 chip n/a n/a 137 epoxy encapsulated ceramic su rface mount with leads 0.14 0.70 186 ceramic surface mount with leads 0.15 0.70 1056 ceramic surface mount with wrap around contacts 0.20 0.70 1088 epoxy encapsulated ceramic su rface mount with leads 0.12 0.70 package style 120 ceramic pill 0.13 0.40 1249 epoxy encapsulated ceramic surface mount with wrap around contacts 0.12 0.70 part numbering and ordering information when ordering the die only , use the base part number followed by a dash and the number 134. for example: the chip version of base part number ma4l021 is ma4l021-134. when ordering packaged parts , use the base part number followed by a dash plus the associated suffix as defined in table i ?available case styles? below, except wh ere the complete part number with dash number is given. for example: the ma4l011-134 die in the 186 style package becomes ma4l011-186. the capacitance values in the specificat ion table on page 2 lists the junction capacitance for the chip. the capacitance for th e same chip in an alternative package will be different and is co mputed by adding the junction capac itance of the chip plus the parasitic capacitance of the alter native package as defined in table ii ?associated package parasitics ? below. base part available package styles ma4l011 30, 31, 32, 54, 134, 137,186, 1056, 1088 ma4l021 31, 120, 134, 1056 ma4l022 30, 32, 120, 134, 137, 186, 1056 ma4l031 31, 36, 134, 186, 1056 ma4l032 31, 32, 134, 186, 1056 ma4l062 134 ma4l101 30, 134, 186 ma4l401 30, 31, 120,134, 1056 MA4L301 31,1249, 1056 madl-000062-105600 1056 (uses ma4l062 chip) madl-000301-01340w 134 (chip used in MA4L301 series) table ii associated package parasitics table i available case styles package dimensions can be found on the m/a-com technology solutions website under outline drawings 134 chip 31,32 30 137 1088 186 1056 120 1249
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